? semiconductor components industries, llc, 2012 december, 2012 ? rev. 1 1 publication order number: ngtb50n60fw/d NGTB50N60FWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. features ? optimized for very low v cesat ? low switching loss reduces system power dissipation ? soft fast reverse recovery diode ? 5 s short ? circuit capability ? these are pb ? free devices typical applications ? solar inverters ? uninterruptible power supples (ups) ? motor drives absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 100 50 a pulsed collector current, t pulse limited by t jmax i cm 200 a diode forward current @ t c = 25 c @ t c = 100 c i f 100 50 a diode pulsed current t pulse limited by t jmax i fm 200 a short ? circuit withstand time v ge = 15 v, v ce = 300 v, t j +150 c t sc 5 s gate ? emitter voltage transient gate ? emitter voltage v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 223 89 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 50 a, 600 v v cesat = 1.45 v e off = 1.20 mj e device package shipping ordering information NGTB50N60FWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 50n60f aywwg g e c
NGTB50N60FWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.56 c/w thermal resistance junction ? to ? case, for diode r jc 0.74 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 50 a v ge = 15 v, i c = 50 a, t j = 150 c v cesat 1.25 ? 1.45 1.7 1.7 ? v gate ? emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? ? ? 0.5 2 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7300 ? pf output capacitance c oes ? 275 ? reverse transfer capacitance c res ? 170 ? gate charge total v ce = 480 v, i c = 50 a, v ge = 15 v q g ? 310 ? nc gate to emitter charge q ge ? 60 ? gate to collector charge q gc ? 150 ? switching characteristic, inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 50 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 117 ? ns rise time t r ? 43 ? turn ? off delay time t d(off) ? 285 ? fall time t f ? 105 ? turn ? on switching loss e on ? 1.1 ? mj turn ? off switching loss e off ? 1.2 ? total switching loss e ts ? 2.3 ? turn ? on delay time t j = 150 c v cc = 400 v, i c = 50 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 112 ? ns rise time t r ? 45 ? turn ? off delay time t d(off) ? 300 ? fall time t f ? 214 ? turn ? on switching loss e on ? 1.4 ? mj turn ? off switching loss e off ? 2.0 ? total switching loss e ts ? 3.4 ?
NGTB50N60FWG http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min symbol test conditions diode characteristic forward voltage v ge = 0 v, i f = 50 a v ge = 0 v, i f = 50 a, t j = 150 c v f 1.4 ? 1.95 2.1 2.5 ? v reverse recovery time t j = 25 c i f = 50 a, v r = 200 v di f /dt = 200 a/ s t rr ? 77 ? ns reverse recovery charge q rr ? 0.4 ? c reverse recovery current i rrm ? 8 ? a
NGTB50N60FWG http://onsemi.com 4 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 250 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 12 8 4 0 200 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature ( c) v ce , collector ? emitter voltage (v) ? 75 0 0.5 1.0 80 40 20 0 10 100 1000 i c , collector current (a) i c , collector current (a) v ce , collector ? emitter voltage (v) capacitance (pf) v ge = 17 v to 13 v t j = 25 c 11 v 10 v 8 v 7 v i c , collector current (a) v ge = 17 v to 13 v t j = 150 c 10 v 9 v 8 v 7 v i c , collector current (a) t j = ? 40 c 10 v 9 v 7 v to 8 v t j = 25 c t j = 150 c 10,000 1.5 2.0 2.5 i c = 100 a i c = 50 a i c = 10 a i c = 5 a 60 100 c ies c oes c res 3.0 200 150 100 50 0 8 7 6 9 v 5 4 3 2 1 08 7 6 11 v 250 200 150 100 50 0 5 4 3 2 1 0 250 200 150 100 50 0 8 7 6 v ge = 17 v to 13 v 11 v 180 160 140 120 100 80 60 40 20 0 16 ? 25 25 75 125 175
NGTB50N60FWG http://onsemi.com 5 typical characteristics figure 7. diode forward characteristics figure 8. typical gate charge v f , forward voltage (v) q g , gate charge (nc) 1.5 1.0 0.5 0 0 20 40 60 80 120 figure 9. switching loss vs. temperature figure 10. switching time vs. temperature t j , junction temperature ( c) t j , junction temperature ( c) 140 120 100 80 60 40 20 0 2.5 0 1000 figure 11. switching loss vs. i c figure 12. switching time vs. i c i c , collector current (a) i c , collector current (a) 8 4.5 8 1000 i f , forward current (a) v ge , gate ? emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) 3.0 100 160 v ce = 400 v v ge = 15 v i c = 50 a rg = 10 v ce = 400 v v ge = 15 v t j = 150 c rg = 10 2.0 20 15 10 5 0 0 100 10 1 20 40 60 80 100 120 140 160 20 32 44 56 68 100 10 1 2.5 t j = 25 c t j = 150 c v ce = 480 v e on e off t f t d(on) t r t d(off) v ce = 400 v v ge = 15 v i c = 50 a rg = 10 e on e off t f t d(on) t r t d(off) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 3.5 50 100 150 200 250 300 350 2 1.5 1.0 0.5 0 4 3.5 3 2.5 2 1.5 1 0.5 0 80 92 104 20 104 32 44 56 92 80 68
NGTB50N60FWG http://onsemi.com 6 typical characteristics figure 13. switching loss vs. rg figure 14. switching time vs. rg rg, gate resistor ( ) rg, gate resistor ( ) 75 65 55 45 35 25 15 5 7 75 65 55 45 35 25 15 5 10,000 figure 15. switching loss vs. v ce figure 16. switching time vs. v ce v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 525 475 425 375 325 275 225 175 3 1 10 100 1000 figure 17. safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 0.01 10 100 1000 switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) i c , collector current (a) 85 v ce = 400 v v ge = 15 v i c = 50 a t j = 150 c 85 v ce = 400 v v ge = 15 v i c = 50 a t j = 150 c 575 v ge = 15 v i c = 50 a rg = 10 t j = 150 c single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 1000 100 10 1 e on e off t f t d(on) t r t d(off) figure 18. reverse bias safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 1 10 100 1000 i c , collector current (a) v ge = 15 v, t c = 125 c e on e off v ge = 15 v i c = 50 a rg = 10 t j = 150 c t f t d(on) t r t d(off) 1 0.1 dc operation 1 ms 50 s 100 s 6 5 4 3 2 1 0 2.4 1.8 1.2 0.6 0 525 475 425 375 325 275 225 175 575
NGTB50N60FWG http://onsemi.com 7 typical characteristics 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.56 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 6.84e ? 5 0.002 0.03 0.1 r i ( c/w) 0.02087 0.05041 0.07919 0.11425 0.19393 figure 19. igbt transient thermal impedance r(t) ( c/w) figure 20. diode transient thermal impedance pulse time (sec) r(t) ( c/w) pulse time (sec) 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.74 junction c 1 c 2 r 1 r 2 c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 2.0 0.09951 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 i (sec) 4.89e ? 4 0.002 0.03 0.1 2.0 r i ( c/w) 0.07958 0.13798 0.18744 0.23523 0.09951 figure 21. test circuit for switching characteristics
NGTB50N60FWG http://onsemi.com 8 figure 22. definition of turn on waveform
NGTB50N60FWG http://onsemi.com 9 figure 23. definition of turn off waveform
NGTB50N60FWG http://onsemi.com 10 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb50n60fw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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